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Korea manufactures the thinnest semiconductor oxide heteroepitaxial layer on monolayer graphene

för 3 månader sedan
According to reports, South Korea Ulsan National Institute of Science and Technology (UNIST) has introduced a new manufacturing method, can be called the world's thinnest oxide semiconductor - two-dimensional zinc oxide (ZnO). The semiconductors have only one atomic thickness. This opens up new possibilities for thin, transparent and flexible electronic devices such as ultra-compact sensors.

The new ultra-thin oxide semiconductor was created by a team led by Professor Zonghoon Lee, a professor of materials science and engineering at UNIST.

The material grows a single atomic thickness of ZnO layer directly on graphene by using atomic layer deposition (ALD). It is also considered a heteroepitaxial layer of the thinnest semiconductor oxide on monolayer graphene. rk73z1ettp

"Flexible high-performance equipment is essential for traditional wearable electronics," said Lee. "With this new material, we can achieve truly high-performance flexible devices."

The team pointed out that as existing silicon manufacturing processes become more sophisticated, performance becomes a more critical issue and there have been many studies on next-generation semiconductor alternative silicon. Graphene has excellent conductive properties, but it can not be used as an alternative to silicon in electronic products because it does not have bandgap. However, in graphene, electrons can move at a constant rate, regardless of their energy, they do not stop.

To address this problem, the research team decided to demonstrate the growth of the atoms between atoms and atoms of zinc and oxygen by observing at the edge of the first zigzag of the ZnO monolayer on graphene. Then, they were experimentally determined that the thinnest ZnO monolayer had a wide band gap (up to 4.0 eV) due to quantum confinement and graphene-like "ultra-honeycomb" structures, as well as high optical clarity. Existing oxide semiconductors have a relatively large band gap, ranging from 2.9 to 3.5 eV. The greater the bandgap energy, the lower the leakage current and excess noise.

"This is the first time that we have actually observed the in situ formation of the hexagonal structure of ZnO," said the researchers. "Through this process, we understand the process and principle of two-dimensional ZnO semiconductor production." adum1200

"The heteroepitaxial stack of thinnest 2D oxide semiconductors on graphene has potential for future optoelectronic devices related to high optical transparency and flexibility," said Lee. "This study produces a new class of 2D heterostructures , Including semiconductor oxides formed by height control of the epitaxial growth of the deposition path.


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